NMSD200B01-7 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:3V @ 1mA
• Package / Case:6-TSSOP, SC-88, SOT-363
• Supplier Device Package:SOT-363
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):200mW (Ta)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
• Vgs (Max):±20V
• Series:--

• Rds On (Max) @ Id, Vgs:3 Ohm @ 50mA, 5V
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)