NP35N04YUG-E1-AY Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:8-SMD, Flat Lead Exposed Pad
• Supplier Device Package:8-HSON
• Mounting Type:Surface Mount
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):1W (Ta), 77W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2850pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:54nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:10 mOhm @ 17.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:35A (Tc)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)