NP83P06PDG-E1-AY Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:TO-263
• Mounting Type:Surface Mount
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):1.8W (Ta), 150W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:10100pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:190nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:8.8 mOhm @ 41.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:83A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)