NSS60101DMTTBG Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:2 NPN (Dual)
• Current - Collector (Ic) (Max):1A
• Voltage - Collector Emitter Breakdown (Max):60V
• Vce Saturation (Max) @ Ib, Ic:180mV @ 100mA, 1A
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
• Power - Max:2.27W
• Frequency - Transition:180MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-WDFN Exposed Pad
• Supplier Device Package:6-WDFN (2x2)