NST857BDP6T5G Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:2 PNP (Dual)
• Current - Collector (Ic) (Max):100mA
• Voltage - Collector Emitter Breakdown (Max):45V
• Vce Saturation (Max) @ Ib, Ic:700mV @ 5mA, 100mA
• Current - Collector Cutoff (Max):15nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
• Power - Max:350mW
• Frequency - Transition:100MHz
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-963
• Supplier Device Package:SOT-963