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NSVDTA113EM3T5G

ON Semiconductor
NSVDTA113EM3T5G HongDa Electronics NSVDTA113EM3T5G
  • Manufacturer Part# NSVDTA113EM3T5G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PNP 50V 0.1A SOT723
  • More DetailPre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
NSVDTA113EM3T5G Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):1 kOhms

 

  • DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Power - Max:260mW
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SOT-723

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