NTB082N65S3F ON Semiconductor | HongDa Electronics

NTB082N65S3F HongDa Electronics

Manufacturer Part# NTB082N65S3F
Product CategoryDiscrete Semiconductor Products
Short DescriptionSUPERFET3 650V D2PAK PKG
More DetailN-Channel 650V 40A (Tc) 313W (Tc) Surface Mount D²...

In Stock: 1000

Can ship immediately

Datasheet:

NTB082N65S3F Datasheet

Technical Details

Vgs(th) (Max) @ Id:5V @ 4mA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
Mounting Type:Surface Mount
Operating Temperature:-55°C ~ 150°C (TJ)
Power Dissipation (Max):313W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:3410pF @ 400V
Vgs (Max):±30V
Gate Charge (Qg) (Max) @ Vgs:81nC @ 10V

Series:SuperFET® III
Rds On (Max) @ Id, Vgs:82 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):10V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drain to Source Voltage (Vdss):650V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Active
Packaging:Tape & Reel (TR)

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