NTB35N15T4G Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D2PAK
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):2W (Ta), 178W (Tj)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:3200pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:100nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:50 mOhm @ 18.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:37A (Ta)
• Drain to Source Voltage (Vdss):150V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)