NTBS2D7N06M7

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D²PAK (TO-263)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):176W (Tj)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:6655pF @ 30V
• Vgs (Max):±20V
• Series:--

• Vgs(th) (Max) @ Id:4V @ 250µA
• Rds On (Max) @ Id, Vgs:2.7 mOhm @ 80A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:110A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active