NTBV45N06LT4G Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2V @ 250µA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D2PAK
• Mounting Type:Surface Mount
• Operating Temperature:--
• Power Dissipation (Max):2.4W (Ta), 125W (Tj)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1700pF @ 25V
• Gate Charge (Qg) (Max) @ Vgs:32nC @ 5V

• Series:--
• Rds On (Max) @ Id, Vgs:28 mOhm @ 22.5A, 5V
• Current - Continuous Drain (Id) @ 25°C:45A (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Not For New Designs
• Packaging:Tape & Reel (TR)