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NTF2955T1G Discrete Semiconductor Products

ON Semiconductor
NTF2955T1G HongDa Electronics NTF2955T1G
  • Manufacturer Part# NTF2955T1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 60V 1.7A SOT-223P-Channel 60V 1.7A (Ta...
  • More DetailN/A
In Stock: 9000

Can ship immediately

Datasheet:
NTF2955T1G Datasheet

Technical Details

  • Series:NTF2955
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:185 mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:14.3nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:492pF @ 25V
  • FET Feature:--
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223
  • Package / Case:TO-261-4, TO-261AA
  • Base Part Number:NTF2955T1G

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Features

    1. Design for low RDS(on)

    2. Withstands High Energy in Avalanche and Commutation Modes

    3. AEC−Q101 Qualified − NVF2955

    4. These Devices are Pb−Free and are RoHS Compliant

2. Applications

    1. Power Supplies

    2. PWM Motor Control

    3. Converters

    4. Power Management

3. Electrical characteristics

      image.png

4. Package dimensions

       image.png



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