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NTP082N65S3F

ON Semiconductor
NTP082N65S3F HongDa Electronics NTP082N65S3F
  • Manufacturer Part# NTP082N65S3F
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 82 MOHM TO220 P
  • More DetailN-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-...
In Stock: 732

Can ship immediately

Datasheet:
NTP082N65S3F Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:81nC @ 10V
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):313W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3410pF @ 400V
  • Vgs (Max):±30V
  • Series:FRFET®, SuperFET® II

 

  • Vgs(th) (Max) @ Id:5V @ 4mA
  • Rds On (Max) @ Id, Vgs:82 mOhm @ 20A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:40A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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