NTR3C21NZT1G Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:24 mOhm @ 5A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA
• Power - Max:--

• Gate Charge (Qg) (Max) @ Vgs:17.8nC @ 4.5V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:1540pF @ 16V
• FET Feature:--
• Power Dissipation (Max):470mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3 (TO-236)
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Base Part Number:--