NVATS68301PZT4G Discrete Semiconductor Products

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:DPAK
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):84W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2850pF @ 20V
• Vgs (Max):±20V
• Series:Automotive, AEC-Q101

• Vgs(th) (Max) @ Id:3.5V @ 1mA
• Rds On (Max) @ Id, Vgs:75 mOhm @ 14A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:31A (Ta)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active