NVC6S5A354PLZT1G Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.6V @ 1mA
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:6-CPH
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):1.9W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:600pF @ 20V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:100 mOhm @ 2A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Current - Continuous Drain (Id) @ 25°C:4A (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)