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NVD5117PLT4G-VF01 Discrete Semiconductor Products

ON Semiconductor
NVD5117PLT4G-VF01 HongDa Electronics NVD5117PLT4G-VF01
  • Manufacturer Part# NVD5117PLT4G-VF01
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 60V 61A DPAK
  • More DetailP-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (...
In Stock: 1000

Can ship immediately

Datasheet:
NVD5117PLT4G-VF01 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):4.1W (Ta), 118W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4800pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:85nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:16 mOhm @ 29A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:11A (Ta), 61A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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