NVJD5121NT1G Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):60V
• Current - Continuous Drain (Id) @ 25°C:295mA
• Rds On (Max) @ Id, Vgs:1.6 Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:0.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:26pF @ 20V
• Power - Max:250mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-TSSOP, SC-88, SOT-363
• Supplier Device Package:SC-88/SC70-6/SOT-363