NVMD6P02R2G

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:4.8A
• Rds On (Max) @ Id, Vgs:33 mOhm @ 6.2A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:1700pF @ 16V
• Power - Max:750mW
• Operating Temperature:--
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOIC