NX1029X,115 Discrete Semiconductor Products

Technical Details

• Series:Automotive, AEC-Q101, TrenchMOS™
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):60V, 50V
• Current - Continuous Drain (Id) @ 25°C:330mA, 170mA
• Rds On (Max) @ Id, Vgs:7.5 Ohm @ 100mA, 10V
• Vgs(th) (Max) @ Id:2.1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:0.35nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:36pF @ 25V
• Power - Max:500mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:SOT-666