NX2301P,215 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.1V @ 250µA
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:TO-236AB (SOT23)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):400mW (Ta), 2.8W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:380pF @ 6V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V

• Series:Automotive, AEC-Q101, TrenchMOS™
• Rds On (Max) @ Id, Vgs:120 mOhm @ 1A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:2A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)