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1. Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
2. Features and benefits
1. Very fast switching
2. Low threshold voltage
3. Trench MOSFET technology
4. ESD protection up to 2 kV
5. AEC-Q101 qualified
3. Applications
1. Relay driver
2. High-speed line driver
3. Low-side loadswitch
4. Switching circuits
4. Pinning information

5. Characteristics
