PDTD113ES,126 NXP USA Inc | HongDa Electronics

PDTD113ES,126 HongDa Electronics

Manufacturer Part# PDTD113ES,126
Product CategoryDiscrete Semiconductor Products
Short DescriptionTRANS PREBIAS NPN 500MW TO92-3
More DetailPre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...

In Stock: 1000

Can ship immediately

Datasheet:

PDTD113ES,126 Datasheet

Technical Details

Series:--
Packaging:Tape & Box (TB)
Part Status:Obsolete
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Power - Max:500mW
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:TO-92-3
Base Part Number:PDTD113

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