PH5525L,115

Technical Details

• Vgs(th) (Max) @ Id:2.15V @ 1mA
• Package / Case:SC-100, SOT-669, 4-LFPAK
• Supplier Device Package:LFPAK56, Power-SO8
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):62.5W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2150pF @ 12V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:16.6nC @ 4.5V

• Series:TrenchMOS™
• Rds On (Max) @ Id, Vgs:5.5 mOhm @ 25A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:81.7A (Tc)
• Drain to Source Voltage (Vdss):25V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)