PH6030AL,115

Technical Details

• Vgs(th) (Max) @ Id:2.15V @ 1mA
• Package / Case:SC-100, SOT-669, 4-LFPAK
• Supplier Device Package:LFPAK56, Power-SO8
• Mounting Type:Surface Mount
• Operating Temperature:--
• Power Dissipation (Max):--
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1425pF @ 12V
• Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V

• Series:TrenchMOS™
• Rds On (Max) @ Id, Vgs:6 mOhm @ 15A, 10V
• Current - Continuous Drain (Id) @ 25°C:79A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)