PH8230E,115 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:SC-100, SOT-669, 4-LFPAK
• Supplier Device Package:LFPAK56, Power-SO8
• Mounting Type:Surface Mount
• Power Dissipation (Max):62.5W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1400pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:14nC @ 5V
• Series:TrenchMOS™

• Rds On (Max) @ Id, Vgs:8.2 mOhm @ 10A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:67A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Discontinued at Digi-Key
• Packaging:Cut Tape (CT)