PHB21N06LT,118 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2V @ 1mA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:D2PAK
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):56W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:650pF @ 25V
• Vgs (Max):±15V
• Gate Charge (Qg) (Max) @ Vgs:9.4nC @ 5V

• Series:TrenchMOS™
• Rds On (Max) @ Id, Vgs:70 mOhm @ 10A, 10V
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Current - Continuous Drain (Id) @ 25°C:19A (Tc)
• Drain to Source Voltage (Vdss):55V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)