PHD101NQ03LT,118

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:DPAK
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):166W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2180pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:23nC @ 5V

• Series:TrenchMOS™
• Rds On (Max) @ Id, Vgs:5.5 mOhm @ 25A, 10V
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Current - Continuous Drain (Id) @ 25°C:75A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)