PHK04P02T,518 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:600mV @ 1mA
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):5W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:528pF @ 12.8V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:7.2nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:120 mOhm @ 1A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:4.66A (Tc)
• Drain to Source Voltage (Vdss):16V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Last Time Buy
• Packaging:Tape & Reel (TR)