PHKD3NQ10T,518

Technical Details

• Series:TrenchMOS™
• Packaging:Tape & Reel (TR) 
• Part Status:Last Time Buy
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):100V
• Current - Continuous Drain (Id) @ 25°C:3A
• Rds On (Max) @ Id, Vgs:90 mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id:4V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:633pF @ 20V
• Power - Max:2W
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO