PHN210T,118 Discrete Semiconductor Products

Technical Details

• Series:TrenchMOS™
• Packaging:Tape & Reel (TR) 
• Part Status:Last Time Buy
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:--
• Rds On (Max) @ Id, Vgs:100 mOhm @ 2.2A, 10V
• Vgs(th) (Max) @ Id:2.8V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:250pF @ 20V
• Power - Max:2W
• Operating Temperature:-65°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO