PHT4NQ10LT,135 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2V @ 1mA
• Package / Case:TO-261-4, TO-261AA
• Supplier Device Package:SOT-223
• Mounting Type:Surface Mount
• Operating Temperature:-65°C ~ 150°C (TJ)
• Power Dissipation (Max):6.9W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:374pF @ 25V
• Vgs (Max):±16V
• Gate Charge (Qg) (Max) @ Vgs:12.2nC @ 5V

• Series:TrenchMOS™
• Rds On (Max) @ Id, Vgs:250 mOhm @ 1.75A, 5V
• Drive Voltage (Max Rds On, Min Rds On):5V
• Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)