PMDT670UPE,115

Technical Details

• Series:Automotive, AEC-Q101, TrenchMOS™
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:550mA
• Rds On (Max) @ Id, Vgs:850 mOhm @ 400mA, 4.5V
• Vgs(th) (Max) @ Id:1.3V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:1.14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:87pF @ 10V
• Power - Max:330mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:SOT-666