PMZ1000UN,315

Technical Details

• Vgs(th) (Max) @ Id:950mV @ 250µA
• Package / Case:SC-101, SOT-883
• Supplier Device Package:DFN1006-3
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):350mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:43pF @ 25V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:0.89nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:1 Ohm @ 200mA, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:480mA (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)