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R6002END3TL1 Discrete Semiconductor Products

ROHM Semiconductor
R6002END3TL1 HongDa Electronics R6002END3TL1
  • Manufacturer Part# R6002END3TL1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionNCH 600V 2A POWER MOSFET
  • More DetailN-Channel 600V 1.7A (Tc) 26W (Tc) Surface Mount TO...
In Stock: 1000

Can ship immediately

Datasheet:
R6002END3TL1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):26W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:65pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:3.4 Ohm @ 500mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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