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R6035KNZ1C9

ROHM Semiconductor
R6035KNZ1C9 HongDa Electronics R6035KNZ1C9
  • Manufacturer Part# R6035KNZ1C9
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CHANNEL 600V 35A TO247
  • More DetailN-Channel 600V 35A (Tc) 379W (Tc) Through Hole TO-...
In Stock: 406

Can ship immediately

Datasheet:
R6035KNZ1C9 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):379W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3000pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:72nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:102 mOhm @ 18.1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:35A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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