RD3H200SNTL1 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:TO-252
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):20W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:950pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:12nC @ 5V

• Series:--
• Rds On (Max) @ Id, Vgs:28 mOhm @ 20A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Current - Continuous Drain (Id) @ 25°C:20A (Ta)
• Drain to Source Voltage (Vdss):45V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)