RDD022N60TL ROHM Semiconductor | HongDa Electronics

RDD022N60TL HongDa Electronics

Manufacturer Part# RDD022N60TL
Product CategoryDiscrete Semiconductor Products
Short DescriptionMOSFET N-CH 600V CPT
More DetailN-Channel 600V 2A (Tc) 20W (Tc) Surface Mount CPT3

In Stock: 1000

Can ship immediately

Datasheet:

RDD022N60TL Datasheet

Technical Details

Vgs(th) (Max) @ Id:4.7V @ 1mA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:CPT3
Mounting Type:Surface Mount
Operating Temperature:150°C (TJ)
Power Dissipation (Max):20W (Tc)
FET Feature:--
Input Capacitance (Ciss) (Max) @ Vds:175pF @ 25V
Vgs (Max):±30V
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V

Series:--
Rds On (Max) @ Id, Vgs:6.7 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):10V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drain to Source Voltage (Vdss):600V
Technology:MOSFET (Metal Oxide)
FET Type:N-Channel
Part Status:Not For New Designs
Packaging:Tape & Reel (TR)

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