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RDN050N20FU6

ROHM Semiconductor
RDN050N20FU6 HongDa Electronics RDN050N20FU6
  • Manufacturer Part# RDN050N20FU6
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 200V 5A TO-220FN
  • More DetailN-Channel 200V 5A (Ta) 30W (Tc) Through Hole TO-22...
In Stock: 1000

Can ship immediately

Datasheet:
RDN050N20FU6 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220FN
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):30W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:292pF @ 10V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:18.6nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:720 mOhm @ 2.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Drain to Source Voltage (Vdss):200V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs
  • Packaging:Bulk 

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