RDR005N25TL Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:3V @ 1mA
• Package / Case:SC-96
• Supplier Device Package:TSMT3
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):540mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:70pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:3.5nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:8.8 Ohm @ 250mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
• Drain to Source Voltage (Vdss):250V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Not For New Designs
• Packaging:Tape & Reel (TR)