RJK2055DPA-00#J0 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:--
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-WPAK
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):30W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2400pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:69 mOhm @ 10A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:20A (Ta)
• Drain to Source Voltage (Vdss):200V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)