RJM0306JSP-01#J0

Technical Details

• Series:--
• Packaging:Tube 
• Part Status:Active
• FET Type:2 N and 2 P-Channel (H-Bridge)
• FET Feature:Logic Level Gate, 4V Drive
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:3.5A
• Rds On (Max) @ Id, Vgs:65 mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id:--

• Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:290pF @ 10V
• Power - Max:2.2W
• Operating Temperature:--
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOP