RK7002BT116 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.3V @ 1mA
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SST3
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):200mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:15pF @ 25V
• Vgs (Max):±20V
• Series:--

• Rds On (Max) @ Id, Vgs:2.4 Ohm @ 250mA, 10V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Not For New Designs
• Packaging:Tape & Reel (TR)