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RN1314(TE85L,F)

Toshiba Semiconductor and Storage
RN1314(TE85L,F) HongDa Electronics RN1314(TE85L,F)
  • Manufacturer Part# RN1314(TE85L,F)
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS NPN 0.1W USM
  • More DetailPre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
RN1314(TE85L,F) Datasheet

Technical Details

  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • Base Part Number:RN131*
  • Supplier Device Package:USM
  • Package / Case:SC-70, SOT-323
  • Mounting Type:Surface Mount
  • Power - Max:100mW
  • Frequency - Transition:250MHz
  • Current - Collector Cutoff (Max):500nA
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA

 

  • Series:--
  • Resistor - Emitter Base (R2):10 kOhms
  • Resistor - Base (R1):1 kOhms
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Current - Collector (Ic) (Max):100mA
  • Transistor Type:NPN - Pre-Biased
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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