RN1605TE85LF Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max):100mA
• Voltage - Collector Emitter Breakdown (Max):50V
• Resistor - Base (R1):2.2 kOhms
• Resistor - Emitter Base (R2):47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V

• Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max):100nA (ICBO)
• Frequency - Transition:250MHz
• Power - Max:300mW
• Mounting Type:Surface Mount
• Package / Case:SC-74, SOT-457
• Supplier Device Package:SM6