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RN2427TE85LF

Toshiba Semiconductor and Storage
RN2427TE85LF HongDa Electronics RN2427TE85LF
  • Manufacturer Part# RN2427TE85LF
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS PREBIAS PNP 200MW SMINI
  • More DetailPre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
In Stock: 1000

Can ship immediately

Datasheet:
RN2427TE85LF Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):800mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 100mA, 1V

 

  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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