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RN2709JE(TE85L,F)

Toshiba Semiconductor and Storage
RN2709JE(TE85L,F) HongDa Electronics RN2709JE(TE85L,F)
  • Manufacturer Part# RN2709JE(TE85L,F)
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionTRANS 2PNP PREBIAS 0.1W ESV
  • More DetailPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
In Stock: 4000

Can ship immediately

Datasheet:
RN2709JE(TE85L,F) Datasheet

Technical Details

  • Series:--
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V

 

  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Mounting Type:Surface Mount
  • Package / Case:SOT-553
  • Supplier Device Package:ESV

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