RND030N20TL Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:5.2V @ 1mA
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:CPT3
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):850mW (Ta), 20W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:270pF @ 25V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:6.7nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:870 mOhm @ 1.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:3A (Tc)
• Drain to Source Voltage (Vdss):200V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Not For New Designs
• Packaging:Tape & Reel (TR)