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RQ3E100BNTB Discrete Semiconductor Products

ROHM Semiconductor
RQ3E100BNTB HongDa Electronics RQ3E100BNTB
  • Manufacturer Part# RQ3E100BNTB
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 10A HSMT8
  • More DetailN-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSM...
In Stock: 3000

Can ship immediately

Datasheet:
RQ3E100BNTB Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:8-HSMT (3.2x3)
  • Mounting Type:Surface Mount
  • Operating Temperature:150°C (TJ)
  • Power Dissipation (Max):2W (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 15V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:10.4 mOhm @ 10A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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