RQ3G150GNTB Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-HSMT (3.2x3)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):20W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1450pF @ 20V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:11.6nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:7.2 mOhm @ 15A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:39A (Tc)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)