RQ6C050BCTCR Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.2V @ 1mA
• Package / Case:SC-95-6
• Supplier Device Package:TSMT6 (SC-95)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.25W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:740pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:10.4nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:36 mOhm @ 5A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):4.5V
• Current - Continuous Drain (Id) @ 25°C:5A (Tc)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)